SCOPUS 정보 검색 플랫폼

Volumn 527-529, Issue PART 1, 2006, Pages 135-140

Challenges in large-area multi-wafer SiC epitaxy for production needs

Author keywords

Epitaxial layers; Hot wall CVD; Multi wafer CVD; Planetary reactor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; PURIFICATION; SILICON CARBIDE; SILICON WAFERS;

HIGH-QUALITY SIC WAFERS; HOT-WALL CVD; MULTI-WAFER CVD; PLANETARY REACTORS;

EPITAXIAL LAYERS;

EID: 33845588320 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.135 Document Type: Conference Paper

Times cited : (12)

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