Multi-wafer VPE growth of highly uniform SiC epitaxial layers

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 161-165

  O'Loughlin, M J ^a   Nordby Jr , H D ^a   Burk Jr , A A ^a,b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET DEVICES; PROCESS CONTROL; SEMICONDUCTOR DOPING; SILICON CARBIDE; THICKNESS MEASUREMENT; VAPOR PHASE EPITAXY;

DOPANT CONCENTRATION; INTERRUN VARIATION; INTERWAFER UNIFORMITY; MULTIWAFER VAPOR PHASE EPITAXY REACTOR; STATIC INDUCTION TRANSISTOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033331168     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-161     Document Type: Conference Paper

References (8)

1. S. Sriram, G. Augustine, A. A. Burk, Jr., R.C. Glass, H. M. Hobgood, P. A. Orphanos, L.V. Rowland, T. J. Smith, C. D. Brandt, M. C. Driver, and R. H. Hopkins, IEEE Electron Device Lett., EDL-17, p. 369 (1996).
2. R. R. Siergiej, S. Sriram, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., T. J. Smith, A Morse, and P. A. Orphanos, Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto, Japan 1995), p. 321.
3. A. A. Burk, Jr., M. J. O'Loughlin, R. R. Siergiej, A. K. Agarwal, S. Sriram, R. C. Clarke, M. F. MacMillan, V. Balakrishna, and C. D. Brandt, J. Solid State Electronics, accepted for publication.
4. Aixtron Inc. Kackerstr. 15-17, D-52072 Aachen, Germany.
5. P. M. Frijlink, J. Crystal Growth, 93, p. 207 (1988).
6. A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr., J. Crystal Growth, accepted for publication.
7. A. A. Burk, Jr., M. J. O'Loughlin, and S. S. Mani, in Silicon Carbide, III-Nitrides, and Related Materials, , edited by G. Pensl, H. Morkoç, B. Monemar, and E. Janzén (Materials Science Forum, 264-268, Trans Tech Publications, Switzerland 1998), p. 83-88.
8. Calcarb, Inc., Rancocas, New Jersey, USA.