Quality of SiO 2 and of SiGe formed by oxidation of Si/Si 0.7 Ge 0.3 heterostructure using atomic oxygen at 400 °C

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 134-138

  Nohira, H ^a   Kuroiwa, T ^a   Nakamura, M ^a   Hirose, Y ^a   Mitsui, J ^a   Sakai, W ^b   Nakajima, K ^b   Suzuki, M ^b   Kimura, K ^b   Sawano, K ^c   Nakagawa, K ^d   Shiraki, Y ^c   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Angle resolved photoelectron spectroscopy; Depth profiling; Rutherford back scattering; SiO 2 Si interface

Indexed keywords

OXIDATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY; ATOMIC OXYGEN; DEPTH PROFILING; SIO2/SI INTERFACE;

HETEROJUNCTIONS;

EID: 4644304163     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.042     Document Type: Conference Paper

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