Dependence of SiO 2 /Si interface structure on low-temperature oxidation process

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 197-201

  Hattori, T ^a   Azuma, K ^b   Nakata, Y ^b   Shioji, M ^a   Shiraishi, T ^a   Yoshida, T ^a   Takahashi, K ^a   Nohira, H ^a   Takata, Y ^c   Shin, S ^c   Kobayashi, K ^d  

^a TOKYO CITY UNIVERSITY   (Japan)

^b Advanced LCD Technologies Development Center Co Ltd   (Japan)

^c RIKEN   (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Electronic structure; Interface structure; Oxidation process; Photoelectron spectra; Uniformity

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTONS; POLYCRYSTALLINE MATERIALS; SILICA; SUBSTRATES;

INTERFACE STRUCTURE; MICROWAVE-EXCITED PLASMA; UNIFORMITY;

SURFACE STRUCTURE;

EID: 3342941786     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.044     Document Type: Conference Paper

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