Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2005, Pages 155-160

  Nohira, H ^b   Shinagawa, S ^b   Kase, M ^c   Maruizumi, T ^b   Hattori, T ^a,b  

^a IEEE

^b TOKYO CITY UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPTH PROFILING; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE INSULATORS; NONDESTRUCTIVE DEPTH PROFILING; OXYNITRIDE FILMS;

ELECTRIC INSULATORS;

EID: 43549106295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2005.1635230     Document Type: Conference Paper

References (22)