Advanced high κ dielectrics for nano-electronics - Science and technologies

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 41-60

  Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FERMI LEVEL; LEAKAGE CURRENTS; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRIC; INVERSION CHANNEL; NANOELECTRONICS;

NANOTECHNOLOGY;

EID: 33845257521     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209255     Document Type: Conference Paper

References (41)

1. Materials Research Bulletin, March 2002 issue, on "Alternative Gate Dielectric for Microelectronics", Ed. by R. M. Wallace and G. D. Wilk.
2. J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, J. P. Mannaerts, et al, Appl. Phys. Lett. 77, 130 (2000), references therein.
3. J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, et al, J. Appl. Phys. 89, 3920, (2001), references therein.
4. "High κ Gate Dielectrics for Si and Compound Semiconductors by MBE", J. Kwo and M. Hong, MRS Proceeding, Vol. 745, (2003).
5. F. J. Morin and J. P. Maita, Phys. Rev. 94, 1526, (1954).
6. F. J. Morin and J. P. Maita, Phys. Rev. and 96, 28 (1954).
7. F. J. Reid and R. K. Willardson, J. Electronics and Control, 5, 54 (1958).
8. H. Ehrenreich, J. Appl. Phys. 32, 2155, (1961).
9. "Semiconductor-insulator interfaces", M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering", V.19, pp. 87-100, Ed. J. G. Webster, Published by John Wiley & Sons, New York, 1999, and references therein.
10. "Phys. & Chem. of III-V Compound Semiconductor Interfaces", Ed. C. W Wilmsen, Plenum, New York, (1985).
11. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14(3), May/Jun, 2297, (1996).
12. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science, 283, pp. 1897-1900, (1999).
13. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, IEEE Int'l Electron Devices Mtg (IEDM) Technical Digest, p.943, (1996).
14. and also in Solid State Electronics, 41 (11), 1751, (1997).
15. Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, J. S. Weiner, Y. K. Chen, and A. Y. Cho, Mat. Res. Soc. Symp. Proc. Vol. 573, p. 219, (1999).
16. F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, W. S. Tseng, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, V. 19, No. 8, p. 309, (1998).
17. Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, 2005, and references therein.
18. M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl. Phys. Lett. 76 (3), p. 312, (2000).
19. M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Applied Physics Letters, in press for issue of Dec. 12, 2005.
20. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, (2003).
21. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 86, 152904, (2005), and references therein.
22. A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, J. Vac. Sci. Technol. B 19(4), p. 1434, (2001).
23. M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, and E. A. Stem, Phys. Rev. B 66, 205311, (2002).
24. Y. Yacoby, M. Sowwan, E. Stem, J. Cross, D. Brewe, R. Pindak, J. Pitney, E. Dufresne, and R. Clarke, Nature Materials 1, 99-101, (2002).
25. TH9498.
26. T. Mimura and M. Fukuta, IEEE Trans. Electron Dev., vol. 27(6), p. 1147, (1980).
27. D. S. L. Mui, Z. Wang, and H. Morkoç, Thin Solid Films, vol. 231, p. 107, (1993).
28. Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE Int'l Electron Devices Mtg (IEDM) Technical Digest pp. 67-70, (1998).
29. and also in Electron Dev. Lett., 20, 457, (1999).
30. th (1999).
31. W. C. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts, S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R.L. Lo, M. Hong, and J. Kwo, Journal of Crystal Growth 278 619-623, (2005).
32. W. C. Lee, C.H. Chu, Y.J. Lee, K. L. Jaw, et al, in Conf. Proc. of MRS Spring Meeting, Symposium G, San Francisco. CA, March 28-April 1, 2005.
33. J. P. Locquet, C. MaSoussa, H. Siewart et al, in Conf. Proc. of MRS Spring Meeting, Symposium G, San Francisco. CA, March 28-April 1, 2005.
34. M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, K. A. Anselm, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay, F. Ren, C. R. Abernathy, and S. J. Pearton, MRS Symp. Proc. 622, pp. T2.2.1-T2.213, "Wide bandgap electronic devices" Ed. by R. J. Shul, W. Pletschen, F. Ren, and M. Murakami. (An invited talk at 2000 MRS Spring Meeting April 24-28, San Francisco.)
35. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, et al, App. Phys. Lett. 80, 1661 (2002).
36. A. R. Kortan, M. Hong, J. Kwo, C. P. Chen, J. P. Mannaerts, S. H. Liou, and N. Kopylov, APL, in press, (2005).
37. M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, and J. I. Chyi, in IEEE International Symposium on Compound Semiconductors, IEEE publication series 00TH8498, 495 (2000).
38. th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 14-19, 2000. The paper is on p. 103 of "Compound semiconductor power transistors II and state-of-the-art porgram on compound semiconductors (SOTAPOCS XXXII), Ed. by R. Kopf, A. G. Baca, and S. N. G. Chu ECS Proc. volume 2000-1.
39. S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. G. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, 2005.
40. M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. R. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. Dec. 12 issue, 2005.
41. C. P. Chen, M. Hong, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, Journal of Crystal Growth 278, 638-642, (2005).