Direct determination of epitaxial interface structure in Gd 2O3 passivation of GaAs

Nature Materials

Volumn 1, Issue 2, 2002, Pages 99-101

  Yacoby, Yizhak ^a   Sowwan, Mukhles ^a   Stern, Edward ^b   Cross, Julie O ^c   Brewe, Dale ^c   Pindak, Ron ^d   Pitney, John ^c   Dufresne, Eric M ^e   Clarke, Roy ^e  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b UNIVERSITY OF WASHINGTON   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY ANALYSIS;

EPITAXIAL INTERFACE STRUCTURE;

PHASE INTERFACES;

GADOLINIUM; GADOLINIUM OXIDE; GALLIUM; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRON; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; X RAY CRYSTALLOGRAPHY;

ARSENICALS; CRYSTALLIZATION; CRYSTALLOGRAPHY, X-RAY; ELECTRONS; GADOLINIUM; GALLIUM; MATERIALS TESTING; MOLECULAR CONFORMATION; MOLECULAR STRUCTURE; NANOTECHNOLOGY; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 0037849957     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat735     Document Type: Article

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