|
|
|
Volumn 622, Issue , 2000, Pages
|
|
Wide -band gap electronic devices
[No Author Info available]
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
BIPOLAR TRANSISTORS;
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
CRYSTAL DEFECTS;
ELECTRIC CONDUCTIVITY;
GUNN DEVICES;
HETEROJUNCTIONS;
HIGH ELECTRON MOBILITY TRANSISTORS;
IMPACT IONIZATION;
ION IMPLANTATION;
METAL INSULATOR BOUNDARIES;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR DIODES;
SENSORS;
SILICON CARBIDE;
THERMAL DIFFUSION;
CAPACITANCE-VOLTAGE CURVES;
EIREV;
GUNN OSCILLATORS;
HIGH-VOLTAGE POWER DEVICES;
IMPLANTED BIPOLAR TECHNOLOGY;
METAL THICKNESS;
MICROPLASMA POWER;
PHYSICAL TRANSPORT MODEL;
POWER DENSITY;
PULSED POWER DENSITY;
POWER ELECTRONICS;
|
|
EID: 0034429918
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
|
Times cited : (4)
|
|
References (0)
|