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Volumn 74, Issue 23, 2006, Pages

Annealing of multivacancy defects in 4H-SiC

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[No Author keywords available]

Indexed keywords


EID: 33845244157     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.235201     Document Type: Article
Times cited : (62)

References (26)
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    • PRBMDO 0163-1829 10.1103/PhysRevB.62.8016
    • C. C. Ling, C. D. Beling, and S. Fung, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.62.8016 62, 8016 (2000).
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    • PHRVAO 0031-899X 10.1103/PhysRev.91.1071
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    • Cook, M.1    White, C.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.