SCOPUS 정보 검색 플랫폼

Volumn 527-529, Issue PART 1, 2006, Pages 531-534

Thermal evolution of defects in semi-insulating 4H SiC

Author keywords

Deep levels; Divacancy; EPR; Photoluminescence

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE;

CONTACTLESS RESISTIVITY MAPPING (COREMA); DEEP LEVELS; DIVACANCY; SEMIINSULATING (SI);

SILICON CARBIDE;

EID: 33845274400 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.531 Document Type: Conference Paper

Times cited : (3)

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