EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

JETP Letters

Volumn 82, Issue 7, 2005, Pages 441-443

  Baranov, P G ^a   Il'in, I V ^a   Mokhov, E N ^a   Muzafarova, M V ^a   Orlinskii, S B ^b   Schmidt, J ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LEIDEN UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744440591     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.2142873     Document Type: Article

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