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Volumn 483-485, Issue , 2005, Pages 341-346
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Optical characterization of deep level defects in SiC
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Author keywords
Deep levels; FTIR; Photoluminescence and absorption
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Indexed keywords
ANNEALING;
CARRIER LIFETIME;
CRYSTAL DEFECTS;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
LUMINESCENCE;
CARBON VACANCY;
DEEP LEVEL DEFECTS;
SEMI-INSULATING MATERIAL;
SILICON CARBIDE;
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EID: 33646813549
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.341 Document Type: Conference Paper |
Times cited : (63)
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References (9)
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