Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 444-447

  Alvarez, D ^a   Konovalov, V V ^a   Zvanut, M E ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

Annealing; Boron acceptor; Carbon vacancy; High purity; Intrinsic defect

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; ENERGY GAP; HIGH TEMPERATURE EFFECTS; INSULATING MATERIALS; PARAMAGNETIC RESONANCE; POINT DEFECTS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY;

VACANCIES;

SILICON CARBIDE;

EID: 0037904841     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0175-2     Document Type: Conference Paper

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