Formation of Ge nanocrystals by utilizing nanocluster source

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 817-822

  Lee, P F ^a   Dai, J Y ^a   Chan, H L W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Ge; Nanocluster source; Nonvolatile memory

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CHARGE; MAGNETRON SPUTTERING; NONVOLATILE STORAGE; ULTRAHIGH VACUUM;

COUNTERCLOCKWISE HYSTERESIS LOOP; GROWTH TEMPERATURE; NANOCLUSTER SOURCE; VOLTAGE SHIFT;

GERMANIUM;

EID: 33845201801     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.054     Document Type: Article

References (28)

1. King Y.-C., King T.-J., and Hu C.M. IEEE Trans Electron Devices 48 (2001) 696
2. Duguay S., Grob J.J., Slaoui A., Le Gall Y., and Amann-Liess M. J Appl Phys 97 (2005) 104330
3. Park C.J., Cho K.H., Yang W.-C., Cho H.Y., Choi S.-H., Elliman R.G., et al. Appl Phys Lett 88 (2006) 071916
4. Wan Q., Lin C.L., Liu W.L., and Wang T.H. Appl Phys Lett 82 (2003) 4708
5. Wan Q., Zhang N.L., Liu W.L., Lin C.L., and Wang T.H. Appl Phys Lett 83 (2003) 138
6. Heng C.L., Teo L.W., Ho V., Tay M.S., Lei Y., Choi W.K., et al. Microelectron Eng 66 (2003) 218
7. Wang Y.Q., Chen J.H., Yoo W.J., Yeo Y.-C., Kim S.J., et al. Appl Phys Lett 84 (2004) 5407
8. Chen J.H., Wang Y.Q., Yoo W.J., Yeo Y.-C., Samudra G., Chan D.S.H., et al. IEEE Trans Electron Devices 51 (2004) 1840
9. Das K., NandaGoswami M., Mahapatra R., Kar G.S., Dhar A., Acharya H.N., et al. Appl Phys Lett 84 (2004) 1386
10. Choi W.K., Chim W.K., Heng C.L., Teo L.W., Ho V., Ng V., et al. Appl Phys Lett 80 (2002) 2014
11. Ho V., Tay M.S., Moey C.H., Teo L.W., Choi W.K., Chim W.K., et al. Microelectron Eng 66 (2003) 33
12. Choi W.K., Ho Y.W., Ng S.P., and Ng V. J Appl Phys 89 (2001) 2168
13. Choi W.K., Ng V., Ng S.P., Thio H.H., Shen Z.X., and Li W.S. J Appl Phys 86 (1999) 1398
14. Kanjilal A., Lundsgaard Hansen J., Gaiduk P., Nylandsted Larsen A., Cherkashin N., Claverie A., et al. Appl Phys Lett 82 (2003) 1212
15. Kanoun M., Lemiti M., Bremond G., Souifi A., Bassani F., and Berbezier I. Superlattice Microstruct 36 (2004) 143
16. Sass T., Zela V., Gustafsson A., Pietzonka I., and Seifert W. Appl Phys Lett 81 (2002) 3455
17. Baron T., Pelissier B., Perniola L., Mazen F., Hartmann J.M., and Rolland G. Appl Phys Lett 83 (2003) 1444
18. Kanoun M., Souifi A., Baron T., and Mazen F. Appl Phys Lett 84 (2004) 5079
19. Chang T.C., Yan S.T., Liu P.T., Chen C.W., Lin S.H., and Sze S.M. Electrochem Solid State Lett 7 (2004) G17
20. Kim J.K., Cheong H.J., Kim Y., Yi J.-Y., Bark H.J., Bang S.H., et al. Appl Phys Lett 82 (2003) 2527
21. Wang S.Y., Liu W.L., Wan Q., Dai J.Y., Lee P.F., Suhua L., et al. Appl Phys Lett 86 (2005) 113105
22. Liu W.L., Lee P.F., Dai J.Y., Wang J., Chan H.L.W., Choy C.L., et al. Appl Phys Lett 86 (2005) 013110
23. Lu X.B., Lee P.F., and Dai J.Y. Appl Phys Lett 86 (2005) 203111
24. Lee P.F., Lu X.B., Dai J.Y., Chan H.L.W., Jelenkovic E., and Tong K.Y. Nanotechnol Lett 17 (2006) 1202
25. Tsoukalas D., Dimitrakis P., Kolliopoulou S., and Normand P. Mat Sci Eng B 124-125 (2005) 93
26. Wilk G.D., Wallance R.M., and Anthony J.M. J Appl Phys 89 (2001) 5243
27. Lee P.F., Dai J.Y., Wong K.H., Chan H.L.W., and Choy C.L. J Appl Phys 93 (2003) 3665
28. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe E.F., and Chan K. Appl Phys Lett 68 (1996) 1377