Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1386-1388

  Das, K ^a   NandaGoswami, M ^a   Mahapatra, R ^a   Kar, G S ^a   Dhar, A ^a   Acharya, H N ^a   Maikap, S ^b,c   Lee, Je Hun ^b   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Seoul National University   (South Korea)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY; TRILAYER STRUCTURES;

MOS DEVICES;

EID: 1642281180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646750     Document Type: Article

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