Structure transition of single-texture CoSi 2 nanolayer grown by refractory-interlayer-mediated epitaxy method

Applied Surface Science

Volumn 253, Issue 5, 2006, Pages 2953-2957

  Akhavan, O ^a   Moshfegh, A Z ^a,b  

^a SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^b Institute for Nanoscience and Nanotechnology   (Iran)

Author keywords

CoSi 2; Interlayer; Silicide; XRD

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HEAT TREATMENT; LATTICE CONSTANTS; NANOTECHNOLOGY; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; DIAMOND CUBIC STRUCTURE; INTERLAYERS; METASTABLE STRUCTURE; SILICIDE;

COBALT COMPOUNDS;

EID: 33751394008     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.06.032     Document Type: Article

References (36)

1. White A.E., Short K.T., Dynes R.C., Garno J.P., and Gibson J.M. Appl. Phys. Lett. 50 (1987) 95
2. Wu M.F., Vantomme A., Pattyn H., Langouche G., Maex K., Vanhellemont J., Vanacken J., Vloeberghs H., and Bruynseraede Y. Nucl. Instr. Meth. B 45 (1990) 658
3. Kittl J.A., Shiau W.T., Miles D., Violette K.E., Hu J.C., and Hong Q.Z. Solid State Technol. 42 (1999) 81
4. Kittl J.A., Shiau W.T., Miles D., Violette K.E., Hu J.C., and Hong Q.Z. Solid State Technol. 42 (1999) 55
5. Morgan A.E., Broadbent E.K., Delfi{ligature}no M., Couldman B., and Sadana D.K. J. Electrochem. Soc. 134 (1987) 925
6. Wang Q.F., Oslourn C.M., Smith P.L., Canovai C.A., and Meguire G.E. J. Electrochem. Soc. 140 (1993) 200
7. Hsia S.L., Tan T.Y., Smith P., and McGuire G.E. J. Appl. Phys. 70 (1991) 7579
8. Detavernier C., Van Meirhaeghe R.L., Cardon F., Maex K., Bender H., Brijs B., and Vandervorst W. J. Appl. Phys. 89 (2001) 2146
9. Kim J.R., Bae K.S., and Cho Y.S. J. Mater. Sci. Lett. 16 (1997) 473
10. Sakamoto K., and Maeda T. Vacuum 73 (2004) 595
11. Byun J.S., Kim D.H., Kim W.S., and Kim H.J. J. Appl. Phys. 78 (1995) 1725
12. Detavernier C., Lavoie C., d'Heurle F.M., Bender H., and Van Meirhaeghe R.L. J. Appl. Phys. 95 (2004) 5340
13. Pelleg J. Thin Solid Films 325 (1998) 60
14. Detavernier C., Lavoie C., and Van Meirhaeghe R.L. Thin Solid Films 468 (2004) 174
15. Byun J.S., Kim J.J., Kim W.S., and Kim H.J. J. Electrochem. Soc. 142 (1995) 2805
16. Moshfegh A.Z., Hashemifar S.J., and Akhavan O. Solid State Commun. 128 (2003) 239
17. Moshfegh A.Z., Hashemifar S.J., Akhavan O., and Azimirad R. Thin Solid Films 433 (2003) 298
18. Kim D., and Jeon H. Thin Solid Films 346 (1999) 244
19. Falke M., Gebhardt B., Beddies G., Teichert S., and Hinneberg H.J. Microelectr. Eng. 55 (2001) 171
20. Dass M.L.A., Frazer D.B., and Wei C.S. Appl. Phys. Lett. 58 (1991) 1308
21. Liu P., Li B.Z., Sun Z., Gu Z.G., Huang W.N., Zhou Z.Y., Ni R.S., Lin C.L., Zou S.C., Hong F., and Rozgonyi G.A. J. Appl. Phys. 74 (1993) 1700
22. Vantomme A., and Nicolet M.A. J. Appl. Phys. 75 (1994) 3882
23. Zhang S.L., Cardenas J., D'Heurle F.M., Svensson B.G., and Peterson C.S. Appl. Phys. Lett. 66 (1995) 58
24. Chang J.-J., Liu C.-P., Hsieh T.-E., and Wang Y.-L. Surf. Coat. Technol. 200 (2006) 3314
25. Kleinschmit M.W., Yeadon M., and Gibson J.M. Appl. Phys. Lett. 75 (1999) 3288
26. Chong R.K.K., Yeadon M., Choi W.K., Stach E.A., and Boothroyd C.B. Appl. Phys. Lett. 82 (2003) 1833
27. Akhavan O., Moshfegh A.Z., Hashemifar S.J., and Azimirad R. Appl. Surf. Sci. 233 (2004) 123
28. Lim C.W., Shin C.-S., Gall D., Zuo J.M., Petrov I., and Greene J.E. J. Appl. Phys. 97 (2005) 044909
29. García-Méndez M., Galvan D.H., Posada-Amarillas A., and Farías M.H. Appl. Surf. Sci. 230 (2004) 386
30. Ma K., and Feng J.Y. Appl. Surf. Sci. 252 (2005) 1679
31. Guo S.S., Chu Y.C., and Tsai C.J. Mater. Chem. Phys. 88 (2004) 71
32. Zhang S.L., Cardenas J., d'Heurle F.M., Svensson B.G., and Petersson C.S. Appl. Phys. Lett. 66 (1995) 58
33. Moshfegh A.Z., and Akhavan O. J. Phys. D 34 (2001) 2103
34. Cullity B.D. Elements of X-ray Diffraction. 2nd ed. (1978), Addison-Wesley, Reading, MA Chapter 4
35. O. Akhavan, A.Z. Moshfegh, S.J. Hashemifar, R. Azimirad, Semicond. Sci. Technol., 2006, in press.
36. Qu X.P., Ru G.P., Han Y.Z., Xu B.L., and Li B.Z. J. Appl. Phys. 89 (2001) 2641