Nitride-mediated epitaxy of CoSi2 on Si(001)

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1833-1835

  Chong, R K K ^a   Yeadon, M ^a,b   Choi, W K ^a   Stach, E A ^c   Boothroyd, C B ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; HETEROJUNCTIONS; MICROSTRUCTURE; NITRIDES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

INTERMEDIATE PHASES;

COBALT COMPOUNDS;

EID: 0344089309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555708     Document Type: Article

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