In situ analysis of epitaxial cobalt silicide reaction on silicon (0 0 1)

Vacuum

Volumn 73, Issue 3-4, 2004, Pages 595-601

  Sakamoto, Kunihiro ^a   Maeda, Tatsurou ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cobalt silicide; MOSFET; Oxide mediated epitaxy; RHEED; Salicide; Silicon; SOI

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; DEPOSITION; DOPING (ADDITIVES); LSI CIRCUITS; MOSFET DEVICES; OXIDATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; THERMODYNAMIC STABILITY;

COBALT SILICIDES; OXIDE MEDIATED EPITAXY; SALICIDES; SILICON ON INSULATOR (SOI);

COBALT COMPOUNDS;

EID: 1842425373     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.075     Document Type: Conference Paper

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