Formation of Co and Ta silicides on Si(111) and Si(100) substrates from codeposited Co and Ta thin films

Thin Solid Films

Volumn 325, Issue 1-2, 1998, Pages 60-71

  Pelleg, J ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Co Ta Si; Kinetics; Phase formation; Silicides

Indexed keywords

ACTIVATION ENERGY; COBALT; FILM GROWTH; SEMICONDUCTING SILICON; SUBSTRATES; TANTALUM; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ARRHENIUS PLOTS; SILICIDES;

AMORPHOUS FILMS;

EID: 0032120078     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00451-9     Document Type: Article

References (55)

1. K.N. Tu, J.W. Mayer, in J.M. Poate, K.N. Tu, J.W. Mayer (eds.), Thin Film Interdiffusion and Reactions, Wiley, New York, 1978, p. 359.
2. S.P. Murarka, J. Vac. Sci. Technol. 11 (1980) 775.
3. G.J. van Gurp, C. Langereis, J. Appl. Phys. 56 (1975) 4301.
4. R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson, D.C. Jacobson, Appl. Phys. Lett. 40 (1982) 684.
5. S.L. Hsia, T.Y. Tan, P. Smith, G.E. McGuire, J. Appl. Phys. 72 (1992) 1864.
6. S.L. Hsia, T.Y. Tan, P. Smith, G.E. McGuire, J. Appl. Phys. 70 (1991) 7579.
7. G.B. Kim, H.K. Baik, S.M. Lee, Appl. Phys. Lett. 69 (1996) 3948.
8. G.B. Kim, J.S. Kwak, H.K. Baik, S.M. Lee, J. Appl. Phys. 82 (1997) 2323.
9. T.I. Selinder, D.J. Miller, K.E. Gray, Appl. Phys. Lett. 67 (1995) 1597.
10. S. Ogawa, M. Lawrence, A. Dass, J.A. Fair, T. Kouzaki, D.B. Fraser, Mat. Res. Soc. Symp. Proc. 312 (1993) 193.
11. J.S. Byun, S.B. Kang, H.J. Kim, C.Y. Kim, K.H. Park, J. Appl. Phys. 74 (1993) 3156.
12. G. Briskin, J. Pelleg, M. Talianker, Thin Solid Films 288 (1996) 132.
13. A. Appelbaum, M. Eizenberg, R. Brener, J. Appl. Phys. 55 (1984) 914.
14. J.O. Olowolafe, K.N. Tu, J. Angilello, J. Appl. Phys. 50 (1979) 6316.
15. G. Ottaviani, K.N. Tu, J.W. Mayer, B.Y. Tsaur, Appl. Phys. Lett. 36 (1980) 331.
16. M. Eizenberg, K.N. Tu, J. Appl. Phys. 53 (1982) 1577.
17. J.W. Mayer, S.S. Lau, K.N. Tu, J. Appl. Phys. 50 (1979) 5855.
18. K.N. Tu, W.N. Hammer, J.O. Olowolafe, J. Appl. Phys. 51 (1980) 1663.
19. M.F. Zhu, I. Suni, M.A. Nicolet, T. Sands, J. Appl. Phys. 56 (1984) 2740.
20. S.Q. Wang, L.S. Hung, J.W. Mayer, Thin Solid Films 162 (1988) 199.
21. L.L.S. Hung, F.W. Saris, S.Q. Wang, J.W. Mayer, J. Appl. Phys. 59 (1986) 2416.
22. L. Van den hove, R. Wolters, K. Maex, R. De Keersmaecker, G. Declerck, J. Vac. Sci. Technol. B4 (1986) 1358.
23. M. Tabasky, E.S. Bulat, B.M. Ditchek, M.A. Sullivan, S.C. Shatas, IEEE Trans. Electron Devices 34 (1987) 548.
24. J.M. Phillips, J.L. Batstone, L. Pfeiffer, in J.C.C. Fan, J.M Phillips, B.-Y. Tsaur (eds.), Heteroepitaxy on Silicon II, Symposia Proceedings, Vol. 91, Materials Research Society, Pittsburgh, PA, 1987, p. 365.
25. J. Pelleg, S. Zalkind, L. Zevin, B.M. Ditchek, Thin Solid Films 249 (1994) 126.
26. R.D. Dragsdorf, W.D. Forgeng, Acta Cryst. 15 (1962) 531.
27. S. Zalkind, J. Pelleg, L. Zevin, B.M. Ditchek, Thin Solid Films 249 (1994) 187.
28. R. Dahan, J. Pelleg, L. Zevin, J. Appl. Phys. 67 (1990) 2885.
29. B. Coulman, H. Chen, L. Rehn, J. Appl. Phys. 57 (1985) 643.
30. A.K. Sinha, T.E. Smith, J. Appl. Phys. 44 (1973) 3465.
31. J. Burke, The Kinetics of Phase Transformations in Metals, Pergamon Press, Oxford, 1965, p. 47.
32. B.Z. Weiss, K.N. Tu, D.A. Smith, J. Appl. Phys. 59 (1986) 415.
33. K.N. Tu, B.S. Berry, J. Appl. Phys. 43 (1972) 3283.
34. K.N. Tu, J.W. Mayer, in J.M. Poate, K.N. Tu, J.W. Mayer (eds.), Thin Film Interdiffusion and Reactions, Wiley, New York, 1978, p. 359.
35. M. Setton, in K. Maex, M. Van Rossum (eds.), Properties of Metal Silicides, Inspec, London, 1995, p. 129.
36. A.R. Miedema, R. Boom, F.R. De Boer, J. Less Common Metals 41 (1975) 283.
37. L.L.S. Hung, F.W. Saris, S.Q. Wang, J.W. Mayer, J. Appl. Phys. 59 (1986) 2416.
38. K.-H. Robrock, K.N. Tu, D.W. Abraham, J.B. Clabes, Appl. Phys. Lett. 54 (1989) 1543.
39. F.M. d'Heurle, C.S. Peterson, Thin Solid Films 128 (1985) 283.
40. J.E. Baglin, F.M. d'Heurle, W. Hammer, C.S. Peterson, Nucl. Instrum. Methods 168 (1980) 491.
41. F.M. d'Heurle, in C.L. Dell'Oca, W.M. Bullis (eds.), VLSI Science and Technology/1982, The Electrochemical Society, Pennington, NJ, 1982, p. 194.
42. G. Ottaviani, K.N. Tu, J.W. Mayer, B.Y. Tsaur, Appl. Phys. Lett. 36 (1980) 331.
43. J.W. Mayer, S.S. Lau, K.N. Tu, J. Appl. Phys. 50 (1979) 5855.
44. N.V. Rozhanski, V.O. Lifshits, Phys. Status Solidi A 125 (1991) 237.
45. A. Appelbaum, R.V. Knoell, S. Murarka, J. Appl. Phys. 67 (1985) 1880.
46. C.-D. Lien, M.A. Nicolet, S.S. Lau, Appl. Phys. A 34 (1984) 249.
47. S.H. Ko, S.P. Murarka, A.R. Sitaram, J. Appl. Phys. 71 (1992) 5892.
48. C.S. Peterson, J.E.E. Baglin, F.M. d'Heurle, J.J. Dempsey, J.M.E. Harper, C.M. Serrano, M.Y. Tsai, in J.E.E. Baglin, J.M. Poate (eds.), Proc. Symp. on Thin Film Interfaces and Interactions, Proc. Vol. 80-82, The Electrochemical Society, Princeton, NJ, 1980, p. 290.
49. F.M. d'Heurle, P. Gas, J. Mater. Res. 1 (1900) 205.
50. J.W. Christian, The Theory of Transformation of Metals and Alloys, Pergamon Press, London, 1975, pp. 19, 540.
51. J.A. Borders, J.N. Sweet, in: S.T. Picraux, E.P. EerNisse, F.L. Vook (Eds.), Applications of Ion Beams to Metals, Plenum Press, New York, 1974, p. 179.
52. R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson, D.C. Jacobson, in S. Ho, K.N. Tu (eds.), Thin Films and Interfaces, North Holand, New York, 1982, pp. 79-92.
53. M.Y. Lee, P.A. Bennett, Phys. Rev. Lett. 75 (1995) 4460.
54. T. Barge, S. Poize, J. Bernardini, P. Gas, Appl. Surf. Sci. 53 (1991) 180.
55. A.P. Botha, S. Kritzinger, R. Pretorius, Thin Solid Films 141 (1986) 41.