CoSi2 formation in the presence of Ti, Ta or W

Thin Solid Films

Volumn 468, Issue 1-2, 2004, Pages 174-182

  Detavernier, C ^a,b   Lavoie, C ^a   Van Meirhaeghe, R L ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

CoSi2; Ta; Ti

Indexed keywords

CRYSTALLOGRAPHY; DIFFUSION; ENTROPY; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NUCLEATION; TANTALUM; THERMODYNAMIC STABILITY; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL ORIENTATION; GRAIN BOUNDARY DIFFUSION; PHASE FORMATION; SILICIDATION;

COBALT COMPOUNDS;

EID: 4644239413     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.052     Document Type: Article

References (37)

1. Mann R.W., Miles G.L., Knotts T.A., Rakowski D.W., Clevenger L.A., Harper J.M.E., D'Heurle F.M., Cabral C. Appl. Phys. Lett. 67:1995;3729.
2. Aldrich D.B., d'Heurle F.M., Sayers D.E., Nemanich R.J. Phys. Rev., B. 53:1996;16279.
3. Mangelinck D., Gas P., Gay J.M., Pichaud B., Thomas O. J. Appl. Phys. 84:1998;2583.
4. Boyanov B.I., Goeller P.T., Sayers D.E., Nemanich R.J. J. Appl. Phys. 84:1998;4285.
5. Mangelinck D., Dai J.Y., Pan J., Lahiri S.K. Appl. Phys. Lett. 75:1999;1736.
6. Detavernier C., Van Meirhaeghe R.L., Maex K., Vandervorst W., Brijs B., Cardon F. Appl. Phys. Lett. 77:2000;3170.
7. Detavernier C., Van Meirhaeghe R.L., Cardon F., Maex K. Phys. Rev., B. 62:2000;12045.
8. Lavoie C., Cabral C., d'Heurle F.M., Jordan-Sweet J.L., Harper J.M.E. J. Electron. Mater. 31:2002;597.
9. Detavernier C., Van Meirhaeghe R.L., Cardon F., Maex K., Bender H., Brijs B., Vander-vorst W. J. Appl. Phys. 89:2001;2146.
10. Detavernier C., Van Meirhaeghe R.L., Cardon F., Maex K. Thin Solid Films. 384:2001;243.
11. d'Heurle F.M. J. Mater. Res. 3:1988;167.
12. Kappius L., Tung R.T. Clevenger L., Campbell S.A., Herner B., Kittl J., Besser P.R. Gate Stack and Silicide Issues in Silicon Processing, San Francisco, USA. Mater. Res. Soc. Symp. Proc. vol. 611:2000;C8.2.
13. Zhang S.L., d'Heurle F.M. Appl. Phys. Lett. 76:2000;1831.
14. Zhang S.L., d'Heurle F.M., Lavoie C., Cabral C. Jr., Harper J.M.E. Appl. Phys. Lett. 73:1998;312.
15. Krasko G.L. Mater. Sci. Eng., A Struct. Mater.: Prop. Microstruct. Process. 234:1997;1071.
16. Hong T., Smith J.R., Srolovitz D.J. Phys. Rev., B. 47:1993;13615.
17. Wu R., Freeman A.J., Olson G.B. Phys. Rev., B. 53:1996;7504.
18. Stumpf R., Liu C.L., Tracy C. Appl. Phys. Lett. 75:1999;1389.
19. Dass M.L.A., Fraser D.B., Wei C.S. Appl. Phys. Lett. 58:1991;1308.
20. Maex K., Lauwers A., Besser P., Kondoh E., de Potter M. IEEE Trans. Electron. Dev. 46:1999;1545.
21. Hua L., Vereecke G., Maex K., Froyen L. J. Electrochem. Soc. 148:2001;344.
22. Detavernier C., Van Meirhaeghe R.L., Cardon F., Donaton R.A., Maex K. Microelectron. Eng. 50:2000;125.
23. Jordan-Sweet J.L. IBM J. Res. Dev. 44:2000;457.
24. Byun J.S., Kim D.H., Kim W.S., Kim H.J. J. Appl. Phys. 78:1995;1725.
25. Byun J.S., Kang S.B., Kim H.J., Kim C.Y., Park K.H. J. Appl. Phys. 74:1993;3156.
26. Pelleg J. Thin Solid Films. 325:1998;60.
27. Wang S.Q., Mayer J.W. J. Appl. Phys. 65:1995;1957.
28. Reader A.H., Duchateau J.P.W.B., Crombeen J.E., Naburgh E.P., Somers M.A.J. Appl. Surf. Sci. 53:1991;92.
29. Lin M.Z., Wu C.Y. J. Electrochem. Soc. 136:1989;258.
30. Selinder T.I., Roberts T.A., Miller D.J., Beno M.A., Knapp G.S., Gray K.E., Ogawa S., Fair J.A., Fraser D.B. J. Appl. Phys. 77:1995;6730.
31. Vantomme A., Nicolet M.A., Theodore N.D. J. Appl. Phys. 75:1994;3882.
32. Kim G.B., Kwak J.S., Baik H.K., Lee S.M. J. Appl. Phys. 82:1997;2323.
33. Vantomme A., Degroote S., Dekoster J., Langouche G., Pretorius R. Appl. Phys. Lett. 74:1999;3137.
34. Tung R.T. Appl. Phys. Lett. 68:1996;3461.
35. A. Lauwers, PhD Thesis, Katholieke Universiteit Leuven, Belgium, 1995.
36. Falke M., Gebhardt B., Beddies G., Teichert S., Hinneberg H.J. Thin Solid Films. 336:1998;201.
37. Falke M., Gebhardt B., Beddies G., Teichert S., Hinneberg H.J. Microelectron. Eng. 55:2001;171.