Single-crystalline growth of CoSi 2 by refractory-interlayer- mediated epitaxy

Applied Surface Science

Volumn 233, Issue 1-4, 2004, Pages 123-128

  Akhavan, O ^a   Moshfegh, A Z ^a   Hashemifar, S J ^b   Azimirad, R ^c  

^a SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^b ISFAHAN UNIVERSITY OF TECHNOLOGY   (Iran)

^c UNIVERSITY OF TEHRAN   (Iran)

Author keywords

CoSi 2; Epitaxy; Interlayer; Silicidation

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CRYSTAL GROWTH; EPITAXIAL GROWTH; EVAPORATION; HIGH TEMPERATURE EFFECTS; REFRACTORY MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; TUNGSTEN COMPOUNDS;

COSI2; EPITAXIAL QUALITY; INTERLAYERS; SILICIDATION;

THIN FILMS;

EID: 2942568230     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.007     Document Type: Article

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