Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2412-2416

  Tapajna M ^a,b   Husekova K ^a   Machajdik D ^a   Kobzev, A P ^c   Schram, T ^d   Luptak R ^a   Harmatha, L ^b   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d IMEC   (Belgium)

Author keywords

C V measurement; CMOS; High dielectrics; Metal gates; MOCVD; RBS; RTA

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; HAFNIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; RUTHENIUM;

DIELECTRIC GATE; GATE DIELECTRICS; HIGH KAPPA DIELECTRICS; METAL GATES;

GATES (TRANSISTOR);

EID: 33751211567     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.047     Document Type: Article

References (18)

1. International Technology Roadmap for Semiconductors (2005 edition). Available from: .
2. Visokay M.R., Chambers J.J., Rotondaro A.L.P., and Colombo L. Appl. Phys. Lett. 80 (2002) 3183-3185
3. Akbar M.S., Goplan S., Cho H.-J., Onishi K., Choi R., Nieh R., Kang C.S., Kim Y.H., Han J., Krishnan S., and Lee J.C. Appl. Phys. Lett. 82 (2003) 1757-1759
4. Bastos K.P., Driemeier C., Pezzi R., Soares G.V., Miotti L., Morais J., Baumvol I.J.R., and Wallace R.M. Mat. Sci. Eng. B 112 (2004) 134-138
5. De I., Johri D., Srivastava A., and Osburn C.N. Solid-State Electron. 44 (2000) 1077-1080
6. Ťapajna M., Písečný P., Lupták R., Hušeková K., Fröhlich K., Harmatha L., Hooker J.C., and Roozeboom F. J. Jergel, Mater. Sci. Semicond. Proc. 7 (2004) 271-276
7. 2, in: Symposium of VLSI Tech. Dig., 2005, pp. 230-231.
8. Yang K.J., and Hu Ch. IEEE Trans. Electron Dev. 46 (1999) 1500-1501
9. Yang N., Henson K., Hauser J., and Wortman J. IEEE Trans. Electron. Dev. 46 (1999) 1464-1471
10. Hill W.A., and Coleman C.C. Solid-State Electron. 23 (1980) 987-993
11. Nieuwenhuys B.E., Bouwman R., and Sachtler W.M.H. Thin Solid Films 21 (1974) 51-58
12. Hartmann A.J., Nielson M., Lamb R.N., Watanabe K., and Scott J.F. Appl. Phys. A: Mater. Sci. Proc. 70 (2000) 239-242
13. Jelenkovic E.V., and Tong K.Y. J. Vac. Sci. Technol. B 22 (2004) 2319-2325
14. Dey S.K., Goswami J., Gu D., de Waard H., Marcus S., and Werkhoven C. Appl. Phys. Lett. 84 (2004) 1606-1608
15. 2 interface properties. In: Huff H.R., and Gilmer D.C. (Eds). High Dielectric Constant Materials (2005), Springer, Berlin 45-90
16. Carter R.J., Cartier E., Kerber A., Pantisano L., De Gendt S., and Heyns M. Appl. Phys. Lett. 83 (2003) 533-535
17. Wilk G.D., and Wallace R.M. Appl. Phys. Lett. 74 (1999) 2854-2856
18. Wen H.-C., Lysaght P., Alshareef H.N., et al. J. Appl. Phys. 98 (2005) 043520-1-043520-6