Thermal response of Ru electrodes in contact with SiO 2 and Hf-based high-k gate dielectrics

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Wen, H C ^a,b   Lysaght, P ^a   Alshareef, H N ^a   Huffman, C ^a   Harris, H R ^a   Choi, K ^a   Senzaki, Y ^a   Luan, H ^a   Majhi, P ^a   Lee, B H ^a   Campin, M J ^c   Foran, B ^c   Lian, G D ^c   Kwong, D L ^b  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c Advanced Technology Development Facility (ATDF) Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL REACTION MECHANISM; INTERFACIAL REACTIONS; METAL GATE ELECTRODES; X-RAY SPECTRA ANALYSIS;

ELECTRODES; HAFNIUM; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 25144436354     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012510     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors (ITRS), http://public.itrs.net (2003).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. S. J. Wang, Appl. Phys. Lett. 78, 1604 (2001).
4. A. I. Kingon, J.-P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
5. J. Schaeffer, IEEE International Electron Device Meeting, San Francisco, California, 13-15 December 2004, IEDM Technical Digest IEEE International, p. 287 (2004).
6. I. De, D. Johri, A. Srivastava, and C. M. Osburn, Solid-State Electron. 44, 1077 (2000).
7. H. Zhang, S.-N. Hong, Y.-S. Suh, H. Lazar, G. Heuss, and V. Misra, 2001 IEEE International Electron Device Meeting, Washington, D.C., 3-5 December 2001, pp. 467-470.
8. K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons, Appl. Phys. Lett. 86, 051903 (2005).
9. S. Dey, H. Goswami, D. Gu, H. de Waard, S. Marcus, and C. Werkhoven, Appl. Phys. Lett. 84, 1606 (2004).
10. P. Majhi, 34th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 20-24 September 2004, Proceedings of the 34th European ESSDERC 2004, p. 185.
11. B. Foran, J. Barnett, P. S. Lysaght, M. P. Agustin, and S. Stemmer, J. Electron Spectrosc. Relat. Phenom. 143, 151 (2005).
12. L. M. Terman, Solid-State Electron. 5, 285 (1962).
13. N. G. Einspruch and G. B. Larrabee, VLSI Electronics Microstructure Science (Academic, New York, 1983), Vol. 6.
14. A. C. Diebold, B. Foran, C. Kisielowski, D. A. Muller, S. J. Pennycook, E. Principe, and S. Stemmer, Microsc. Microanal. 9, 493 (2003).
15. C. Petersson, J. Baglin, J. Dempsey, F. d'Heurle, and S. L. Placa, J. Appl. Phys. 53, 4866 (1982).
16. S.-Q. Wang, S. Hong, A. White, C. Hoener, and J. Mayer, J. Appl. Phys. 77, 5751 (1995).
17. Z. Q. Chen, V. Misra, R. P. Haggerty, and S. Stemmer, Phys. Status Solidi B 241, 2253 (2004).
18. S. Stemmer, Z. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, Jpn. J. Appl. Phys., Part 1 42, 3593 (2003).
19. S. Stemmer, Z. Y. Li, C. G. Levi, B. Foran, P. S. Lysaght, S. K. Streiffer, P. Fuoss, and S. Seifert, Appl. Phys. Lett. 83, 3141 (2003).
20. S. Ramanathan, P. C. McIntyre, J. Luning, P. S. Lysaght, Y. Yang, Z. Chen, and S. Stemmer, J. Electrochem. Soc. 150, F173 (2003).