SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

Springer Series in Advanced Microelectronics

Volumn 16, Issue , 2005, Pages 45-90

  Irene, E A ^a  

^a NONE

Author keywords

Film Growth; Gate Oxide; Interface Property; Root Mean Square; Thermal Oxidation

Indexed keywords

EID: 85061920322     PISSN: 14370387     EISSN: 21976643     Source Type: Book Series    
DOI: 10.1007/3-540-26462-0_3     Document Type: Chapter

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