Substrate removal of AlGaN/GaN HEMTs using laser lift-off

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2655-2658

  Das, J ^a   Ruythooren, W ^a   Vandersmissen, R ^a   Derluyn, J ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON MOBILITY; GALLIUM COMPOUNDS; HETEROJUNCTIONS; MICROWAVES; SAPPHIRE;

ELECTRON MOBILITY TRANSISTORS; POWER PERFORMANCE; SYSTEM-IN-A-PACKAGE INTEGRATION; THERMAL MANAGEMENT;

TRANSISTORS;

EID: 27344444669     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461355     Document Type: Conference Paper

References (7)

1. U. K. Mishra, P. Parikh, and Y.-F. Wu, Proc. IEEE 90, 1022 (2002).
2. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, and M. Kuzuhara, IEDM Techn. Dig. 17.3.1 (2001).
3. J.J. Xu, S. Keller, G. Parish, S. Heikman, U.K. Mishra, and R.A. York, IEEE Trans. Microwave Theory Tech. 48, 2573 (2000).
4. Y.-F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 586 (2001).
5. J. Sun, H. Fatima, A. Koudymov, A. Chitnis, X. Hu, H.-M. Wang, J. Zhang, G. Simin, J. Yang, and M. Asif Khan, IEEE Electron Device Lett. 24, 375 (2003).
6. M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, phys. stat. sol. (a) 159, R3 (1997).
7. W. S. Wong, T. Sands, and N. W. Cheung, Appl. Phys. Lett. 72, 599 (1998).