A 3-10-ghz gan-based flip-chip integrated broad-band power amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2573-2578

  Xu, Jane J ^a   Keller, S ^a   Parish, G ^a   Heikman, S ^a   Mishra, U K ^a   York, R A ^a  

^a University of California   (United States)

Author keywords

Broad band; Flip chip bonding; Gan high electron mobility transistors (hemts); Power amplifier

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; ELECTRIC NETWORK TOPOLOGY; FLIP CHIP DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE; FLIP-CHIP BONDING; GALLIUM NITRIDE;

POWER AMPLIFIERS;

EID: 0034429090     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.899015     Document Type: Article

References (6)

1. S. T. Sheppard, K. Doverspike,W. L. Pribble, S. T. Allen, J.W. Palmour L. T. Kehias, and T. J. Jenkins, "High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates," IEEE Electron Device Lett., vol. 20, pp. 161-163, Apr. 1999.
2. Y.-F.Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller and U. K. Mishra, "High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance," in Tech. Dig. Int. Electron Devices Meeting 1999, Washington, DC, Dec. 5-8, 1999.
3. N.-Q. Zhang, S. Keller, L. McCarthy, S. P. DenBaars, and U. K. Mishra "6.6-Watt/mm AlGaN/GaN HEMT's on sapphire substrate,", submitted for publication.
4. J. J. Xu, Y.-F. Wu, S. Keller, S. Heikman, B. J. Thibeault, U. K. Mishra and R. A. York, "1-8-GHz GaN-based power amplifier using flip-chip bonding," IEEE Microwave Guided Wave Lett., vol. 9, pp. 277-279, July 1999.
5. E. S. Shapiro, J. J. Xu, A. S. Nagra, F.Williams Jr., U. K. Mishra, and R. A. York, "A high-efficiency traveling-wave power amplifier topology using improved power-combining techniques," IEEE Microwave Guided Wave Lett., vol. 8, pp. 133-135, Mar. 1998.
6. Y.-F. Wu, R. A. York, S. Keller, B. P. Keller, and U. K. Mishra, "3-9 GHz GaN-based microwave power amplifiers with LCR broad-band matching," IEEE Microwave Guided Wave Lett., vol. 9, pp. 314-316 Aug. 1999.