Integrated Raman - IR thermography on AlGaN/GaN transistors

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1339-1342

  Kuball, Martin ^a   Sarua, Andrei ^a   Ji, Hangfeng ^a   Uren, Michael J ^b   Balmer, Richard S ^b   Martin, Trevor ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

FETs; Infrared image sensors; MMICs; Raman scattering; Semiconductor device reliability; Semiconductor device thermal factors

Indexed keywords

GALLIUM NITRIDE; IMAGE SENSORS; INFRARED RADIATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RAMAN SCATTERING; THERMOGRAPHY (IMAGING);

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); IR THERMOGRAPHY; SEMICONDUCTOR DEVICE RELIABILITY; SEMICONDUCTOR DEVICE THERMAL FACTORS;

TRANSISTORS;

EID: 33947691148     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249496     Document Type: Conference Paper

References (6)

1. H. Kim, V. Tilak, B. M. Green, H. Cha, J. A. Smart, J. R. Shealy, and L. F. Eastman. Degradation characteristics of AlGaN-GaN high electron mobility transistors" in Proc. IEEE Int. Reliability Physics Symp., 214-218 (2001).
2. C. Lee, L. Witkowski, H. Q. Tsemg, P. Saunier, R. Birkhahn, D. Olson, G. Munns, S. Guo, B. Albert, "Effects of AlGaN/GaN HEMT structure on RF reliability", Electronics Lett., vol. 41, no. 3, pp. 155-157 (2005)
3. M. Kuball, J.M. Hayes, M.J. Uren, T. Martin, J.C.H. Birbeck, R.S. Balmer, and B.T. Hughes, "Measurement of temperature in high-power AlGaN/GaN HFETs using Raman scattering", IEEE Electron Dev. Lett., Vol. 23, no. L pp. 7-9 (2002).
4. M. Kuball, S. Rajasingam, A. Sarua, M. J. Uren, T. Martin, B. T. Hughes, K. P. Hilton, and R. S. Balmer, "Measurement of temperature distribution in multi-finger AlGaN/GaN HFETs using micro-Raman spectroscopy", Appl. Phys. Lett., vol. 82, no. 1, pp. 124-126 (2003)
5. S. Rajasingam, J. W. Pomeroy, M. Kuball, M. J. Uren, T. Martin, D. C. Herbert, K. P. Hilton, and R. S. Balmer, "Micro-Raman temperature measurements for electric field assessment in active AlGaN/GaN HFETs", IEEE Electron Dev. Lett., vol. 25, no. 7, pp. 456-458 (2004).
6. J.W. Pomeroy, M. Kuball, D. J. Wallis, A. M. Keir, K. P. Hilton, R. S. Balmer, M. J. Uren, T. Martin, and P.J. Heard, "Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy", Appl Phys. Lett., vol. 87, no. 10, pp. 103508-1 - 103508-3 (2005).