Nitrogen doping of epitaxial SiC: Experimental evidence of the re-incorporation of etched nitrogen during growth

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 731-734

  Meziere, J ^a   Ferret, P ^b   Blanquet, E ^a   Pons, M ^a   Di Cioccio, L ^b   Billon, T ^b  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

Author keywords

CVD; Doping; Hydrogen Etching; Simulation

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; HYDROGEN; NITROGEN;

ATOMIC CONCENTRATION; HYDROGEN ETCHING; NITROGEN ETCHING;

SILICON CARBIDE;

EID: 8744233892     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.731     Document Type: Conference Paper

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