Analysis of mass transfer in system β-SiC-α-SiC under silicon carbide sublimation growth

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1011-1014

  Avrov, D D ^a   Bakin, A S ^a   Dorozhkin, S I ^a   Rastegaev, V P ^a   Tairov, Yu M ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY MIXTURES; CRYSTAL GROWTH; CRYSTALLIZATION; GASES; MASS TRANSFER; MATHEMATICAL MODELS; PRESSURE; SILICON CARBIDE; SUBLIMATION; TEMPERATURE; VACUUM;

GAS ATMOSPHERE; GROWTH RATE; SUBLIMATION GROWTH; ZERO TEMPERATURE GRADIENT;

SINGLE CRYSTALS;

EID: 0033514581     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01215-9     Document Type: Article

References (4)

1. J. Drowart, in: E. Ruther, P. Goldfinger, J.P. Hirth (Eds.), Condensation and Evaporation of Solids, Gordon and Breach, New York, 1964, pp. 259-310.
2. Yu.M. Tairov, V.F. Tsvetkov, J. Crystal Growth 43 (1978) 209.
3. Yu.M. Tairov, V.F. Tsvetkov, J. Crystal Growth 52 (1981) 146.
4. O.C. Trulson, P. Oschissel, in: E. Ruther, P. Goldfinger, J.P. Hirth (Eds.), Condensation and Evaporation of Solids, Gordon and Breach, 1964, pp. 313-317.