Integration of self-assembled carbon nanotube transistors: Statistics and gate engineering at the wafer scale

Nanotechnology

Volumn 17, Issue 20, 2006, Pages 5038-5045

  Marty, L ^a,d   Bonhomme, A ^a   Iaia, A ^a   Andre E ^a   Rauwel, E ^b   Dubourdieu, C ^b   Toffoli, A ^c   Ducroquet, F ^b,c   Bonnot, A M ^a   Bouchiat, V ^a  

^a CNRS   (France)

^b MINATEC   (France)

^c CEA LETI   (France)

^d UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; SELF ASSEMBLY; SILICON WAFERS; STATISTICAL METHODS;

GATE OXIDE; LARGE SCALE DEVICE INTEGRATION; METALLIC CONNECTED NANOTUBES; PARAMETER FLUCTUATIONS;

FIELD EFFECT TRANSISTORS;

EID: 33749505540     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/20/002     Document Type: Article

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