Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 27-33

  Lai, Fang I ^a   Kuo, S Y ^b   Wang, J S ^c   Hsiao, R S ^c   Kuo, H C ^a   Chi, J ^c   Wang, S C ^a   Wang, H S ^d   Liang, C T ^d   Chen, Y F ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A3. MBE; A3. Single quantum well; B1. InGaAsN; B3. Long wavelength application

Indexed keywords

ACTIVATION ENERGY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INGAASN; LONG-WAVELENGTH APPLICATION; VARSHNI MODEL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33749336354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.028     Document Type: Article

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