Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1380-1385

  Sun, H D ^a   Hetterich, M ^a   Dawson, M D ^a   Egorov, A Yu ^b   Bernklau, D ^b   Riechert, H ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION INTENSITY; EXCITON LOCALIZATION; GAINNAS; LOCAL FLUCTUATIONS; LOW TEMPERATURES; MULTIQUANTUM WELLS; NITROGEN CONCENTRATIONS; NITROGEN CONTENT; OPTICAL INVESTIGATION; PEAK ENERGY; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PL SPECTRA; S-SHAPED; TEMPERATURE DEPENDENCE;

OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036679112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489716     Document Type: Article

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