Electro-absorption and electro-refraction in InGaAsN quantum well structures

Electronics Letters

Volumn 38, Issue 7, 2002, Pages 343-344

  Jalili, Y S ^a   Stavrinou, P N ^a   Roberts, J S ^a   Parry, G ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CIRCUIT RESONANCE; EXCITONS; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATORS; PHOTOCURRENTS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SUBSTRATES;

ELECTROABSORPTION; ELECTROREFRACTION; EXCITONIC RESONANCES; PHASE MODULATORS; STARK SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037187759     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020236     Document Type: Article

References (4)

1. GalnNAs: A novel material for long wavelength range laser diodes with excellent high temperature performance
2. Temperature dependence of lasing wavelength in a GalnNAs laser diode
3. Electric field dependence of optical absorption near the band gap of QW structures
4. Experimental confirmation of a sum rule for room temperature electroabsorption in GaAs-AlGaAs multiple quantum well structures