InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Applied Physics Letters

Volumn 76, Issue 16, 2000, Pages 2262-2264

  Chang, P C ^a   Baca, A G ^a   Li, N Y ^b   Xie, X M ^b   Hou, H Q ^b   Armour, E ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Emcore Photovoltaics   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000047768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126315     Document Type: Article

References (12)

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