InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Applied Physics Letters

Volumn 76, Issue 19, 2000, Pages 2788-2790

  Chang, P C ^a   Baca, A G ^a   Li, N Y ^b   Sharps, P R ^b   Hou, H Q ^b   Laroche, J R ^c   Ren, F ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Emcore Photovoltaics   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000047769     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126476     Document Type: Article

References (13)

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