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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 7080-7083

Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer deposition

(3) Kim, Jaehyun a Lee, Seungjai a Yong, Kijung a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

Alumina; Atomic layer chemical vapor deposition; Dielectric materials; Gate stack; Hafnium silicate; Thin film

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); PERMITTIVITY; RAPID THERMAL ANNEALING; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; ATOMIC LAYER DEPOSITION; GATE STACK; HAFNIUM SILICATE; IMPURITY CONCENTRATIONS; LEAKAGE CURRENT DENSITIES;

GATES (TRANSISTOR);

EID: 33749030159 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.7080 Document Type: Article

Times cited : (4)

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