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Volumn 20, Issue 3, 2002, Pages 865-872
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Annealing effects of aluminum silicate films grown on Si(100)
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHIZATION;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
FILM GROWTH;
SEMICONDUCTING SILICON;
SPUTTERING;
THERMAL EFFECTS;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ALUMINUM SILICATE;
CHARGE TRAPPING;
HIGH RESOLUTION TUNNELING ELECTRON MICROSCOPY;
TRAP CHARGE DENSITY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0036565032
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1472422 Document Type: Article |
Times cited : (30)
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References (23)
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