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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 865-872

Annealing effects of aluminum silicate films grown on Si(100)

(10) Cho, M H a Rho, Y S a Choi, H J a Nam, S W a Ko, D H a Ku, J H a Kang, H C a Noh, D Y a Whang, C N a Jeong, K a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; SEMICONDUCTING SILICON; SPUTTERING; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM SILICATE; CHARGE TRAPPING; HIGH RESOLUTION TUNNELING ELECTRON MICROSCOPY; TRAP CHARGE DENSITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036565032 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1472422 Document Type: Article

Times cited : (30)

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