Growth of N-doped and Ga + N-codoped ZnO films by radical source molecular beam epitaxy

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 503-508

  Nakahara, K ^a   Takasu, H ^a   Fons, P ^b   Yamada, A ^b   Iwata, K ^b   Matsubara, K ^b   Hunger, R ^b   Niki, S ^b  

^a ROHM CO LTD   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ELECTRIC CONDUCTIVITY; FLUXES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; ZINC OXIDE;

RADIO-FREQUENCY RADICAL CELLS;

MOLECULAR BEAM EPITAXY;

EID: 0036531359     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01952-2     Document Type: Article

References (13)