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Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 166-170

MOCVD growth of ZnO for optoelectronic applications

(5) Gruber, Th a Kirchner, C a Thonke, K a Sauer, R a Waag, A a

a UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; EPITAXIAL GROWTH; EXCITONS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL LAYERS;

ZINC OXIDE;

EID: 0036651056 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200207)192:1<166::AID-PSSA166>3.0.CO;2-G Document Type: Conference Paper

Times cited : (48)

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