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Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4121-4123

Stability of interfacial dislocations in (001) silicon surfacial grain boundaries

(4) Rousseau, K a Rouviere J L a Fournel, F a Moriceau, H a

a CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; INTERFACIAL DISLOCATIONS; LOW TEMPERATURES; SILICON FILMS; SILICON-ON-INSULATORS; SOI SUBSTRATES; THERMAL OXIDATION; ULTRA-THIN; VERY THIN FILMS;

GRAIN BOUNDARIES; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; WAFER BONDING;

SILICON WAFERS;

EID: 79956030336 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1481957 Document Type: Article

Times cited : (30)

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