Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method

Materials Letters

Volumn 47, Issue 4-5, 2001, Pages 276-280

  Kim, H M ^a   Oh, J E ^b   Kang, T W ^a  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; HYDRIDES; POLISHING; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SLURRIES; THICK FILMS; VAPOR PHASE EPITAXY;

HOMOEPITAXY; HYDRIDE VAPOR PHASE EPITAXY (HVPE); MECHANICAL POLISHING LIFTOFF METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035253230     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(00)00249-4     Document Type: Article

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