Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2049-2052

  Habel, Frank ^a   Brückner, Peter ^a   Tsay, Jenq Dar ^b   Liu, Wen Yueh ^b   Scholz, Ferdinand ^a   Schmilz, Dietmar ^c   Alam, Assadullah ^c   Heuken, Michael ^c  

^a UNIVERSITY OF ULM   (Germany)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; OPTIMIZATION; ORGANOMETALLICS; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); HYDROGEN/NITROGEN CARRIER; SURFACE FLATNESS;

GALLIUM NITRIDE;

EID: 27344452015     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461459     Document Type: Conference Paper

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