Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 1, 2002, Pages 59-64

  Darakchieva, V ^a   Birch, J ^a   Paskov, P P ^a   Tungasmita, S ^a   Paskova, T ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

COMPRESSIVE STRENGTH; DEPOSITION; INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; STRAIN; STRUCTURE (COMPOSITION); SURFACES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 37648998711     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200203)190:1<59::AID-PSSA59>3.0.CO;2-F     Document Type: Conference Paper

References (13)