Growth optimization for thick crack-free GaN layers on sapphire with HVPE

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2099-2103

  Richter, E ^a   Hennig, Ch ^a   Kissel, H ^a   Sonia, G ^a   Zeimer, U ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRACK INITIATION; EPITAXIAL GROWTH; SAPPHIRE; STRAIN MEASUREMENT; TENSILE STRESS; VAPOR PHASE EPITAXY;

COMPRESSIVE STRAIN; CRACK-FREE SURFACES; SAPPHIRE TEMPLATES; TENSILE STRAIN;

GALLIUM NITRIDE;

EID: 27344442117     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461487     Document Type: Conference Paper

References (7)

1. R. J. Molnar, W. Götz, L. T. Romano, and N. M. Johnson, J. Cryst. Growth 178, 147 (1997).
2. P. R. Tavernier, E. V. Etzkorn, Y. Wang, and D. R. Clarke, Appl. Phys. Lett. 77, 1804 (2000).
3. E. V. Etzkorn and D. R. Clarke, J. Appl. Phys. 89, 1025 (2001).
4. E. Richter, S. Gramlich, A. Klein, E. Nehauer, I. Rechenberg, U. Zeimer, and M. Weyers, phys. stat. sol. (a) 188, 439 (2001).
5. E. Aujol, J. Napierala, A. Trassoudaine, E. Gil-Lafon, and R. Cadoret, J. Cryst. Growth 222, 538 (2001).
6. S. Charles, D. Clarke, E. V. Etzkorn, University of California Santa Barbara, National Nanofabrication Users Network, 82 (2000).
7. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997).