The influence of AlN buffer layer thickness on the properties of GaN epilayer

Journal of Crystal Growth

Volumn 268, Issue 1-2, 2004, Pages 24-29

  Zhang, J C ^a   Zhao, D G ^a   Wang, J F ^a,b   Wang, Y T ^a   Chen, J ^a   Liu, J P ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

A1. Buffer layer; A1. Line defects; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; EDGE DISLOCATIONS; LINE DEFECTS; THERMAL MISMATCH;

ALUMINUM NITRIDE;

EID: 2942737374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.102     Document Type: Article

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