Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Oshima, M ^a   Takahashi, H ^a   Okabayashi, J ^a   Toyoda, S ^a   Kumigashira, H ^a   Inoue, M ^b   Mizutani, M ^b   Yugami, J ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); NITROGEN; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; PLASTIC FILMS; RAPID THERMAL ANNEALING; SUBSTRATES; X RAY ANALYSIS;

BAND OFFSETS; ELECTRON TRAPPING; GATE STACKS; VALENCE BAND; X-RAY ABSORPTION SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 33747449777     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219694     Document Type: Article

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