Interfacial chemistry and structures of ultrathin Si oxynitride films

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 291-295

  Oshima, M ^a   Kimura, K ^a   Ono, K ^a   Horiba, K ^a   Nakamura, K ^a   Kumigashira, H ^a   Oh, J H ^b   Niwa, M ^c   Usuda, K ^c   Hirashita, N ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c Semiconduct Technol Acad Res C   (Japan)

Author keywords

Interfacial chemistry; Interfacial structures; Photoelectron spectroscopy; Ultrathin Si oxynitride films

Indexed keywords

CRYSTAL STRUCTURE; INTERFACES (MATERIALS); MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; SYNCHROTRON RADIATION; ULTRATHIN FILMS;

INTERFACIAL STRUCTURES;

SILICON COMPOUNDS;

EID: 0038684498     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00430-6     Document Type: Conference Paper

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