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Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5449-5451

Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy

(8) Toyoda, S a Okabayashi, J a Kumigashira, H a Oshima, M a Ono, K b Niwa, M c Usuda, K c Hirashita, N c

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF MATERIALS STRUCTURE SCIENCE (Japan)

c Semiconduct Technol Acad Res C (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CURVE FITTING; DOPING (ADDITIVES); ENERGY DISSIPATION; FILM GROWTH; LEAKAGE CURRENTS; NITROGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SYNCHROTRON RADIATION; THERMOOXIDATION; THICKNESS MEASUREMENT;

THERMAL NITRIDATION; VALENCE BANDS;

ULTRATHIN FILMS;

EID: 0942299477 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1633977 Document Type: Article

Times cited : (20)

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