Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 201-204

  Ishida, T ^a   Yamamoto, Y ^a   Hayafuji, N ^a   Miyakuni, S ^a   Hattori, R ^a   Ishikawa, T ^a   Mitsui, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONTACTS; FLUORINE; GATES (TRANSISTOR); MOLYBDENUM; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

MOLYBDENUM GATE CONTACT METAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030672944     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)