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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1099-1103

High reliability of 0.1 μm InGaAs/InAlAs/InP high electron mobility transistors microwave monolithic integrated circuit on 3-inch InP substrates

(11) Chou, Yeong Chang a Leung, Denise a Lai, Richard a Grundbacher, Ron a Scarpulla, John a Barsky, Mike a Nishimoto, Matt a Eng, David a Liu, Po Hsin a Oki, Aaron a Streit, Dwight a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

Ea; HEMT; InAlAs; InGaAs; InP; MMIC; MTTF

Indexed keywords

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRESSES; SUBSTRATES;

MEDIAN TIME TO FAILURE (MTTF);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 6444244380 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1099 Document Type: Conference Paper

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.